The Spin-Valve Transistor - a New Magnetoelectronic Device |
| P.S. Anil Kumar and J.C. Lodder Information Storage Technology Group, MESA+ Research Institute, University of Twente, 7500 AE Enschede, The Netherlands |
| Full Text PDF |
| A spin-valve transistor showing high sensitivity at low fields was developed. A large magnetocurrent, above 500% is realized by a magnetic field change of 2 to 4 Oe at 80 K. Hot electrons are injected into the spin-valve layer through a Si-Pt Schottky diode. These hot electrons, while traversing through the spin-valve, are spin-dependently scattered. Those electrons with right energy and momentum are collected by a collector (an Au-Si Schottky diode) constituting a collector current. The relative orientation of the magnetic layer in the spin-valve is changed by the application of a magnetic field and causes a change in collector current giving a large magnetocurrent. |
| DOI: 10.12693/APhysPolA.97.111 PACS numbers: 75.70.-i, 75.70.Pa |