Intervalley Transfer of Electrons in ZnS-Type Thin Film Electroluminescent Devices |
| H. Zhao, Y. Wang, Z. Xu and X. Xu Institute of Optoelectronic Technology, Northern Jiaotong University, Beijing 100044, P.R.China |
| Received: February 16, 1999; revised version May 11, 1999 |
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| Based on the calculation about intervalley scattering rates in ZnS, the intervalley transfer process in ZnS-type thin film electroluminescent devices is investigated through the Monte Carlo simulation. The transient time of intervalley transfer is about 0.2-0.3 ps, it coincides with that of electron average energy. Intervalley distribution shifts to high valleys as the electric field increased. The electron kinetic energy distributions in different valleys are also gained. We propose that high valleys could store energies, which could prolong the decay of the electron average energy as the field was removed. These results could be used as the basic data on the study of electroluminescent process and the citation of valley parameters in analytic models should be carefully considered. |
| DOI: 10.12693/APhysPolA.96.475 PACS numbers: 72.20.-i, 78.60.-b |