Lattice Deformation in AlxGa1-xAs Epitaxial Layers Caused by Implantation with High Doses of 1 Mev Si Ions

K. Wieteskaa, W. Wierzchowskib, W. Graeffc, A. Turosb and R. Grötzscheld a Institute of Atomic Energy, 05-400 Otwock-Świerk, Poland b Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland c HASYLAB at DESY, 22603 Hamburg, Germany d Forschungszentrum Rossendorf, 01314 Dresden, Germany

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A series of highly perfect Al0.45Ga0.55 As epitaxial layers implanted with 1 MeV Si ions to the doses in a range 7×1013-2×1015 ions/cm2 were studied with various conventional and synchrotron X-ray diffraction methods. The presently used methods allowed both the measurement of lattice parameter changes and strain induced deformation. The evaluation of complete strain profiles was also performed by numerical simulation of diffraction curves. It was found that the implantation induced considerable change of lattice parameter reached the maximum at the dose 3×1014 ions/cm2. The recorded curves proved also that the lattice parameter is almost constant in the near surface region of the implanted layers. The applied doses did not cause lattice amorphisation at room temperature.

DOI: 10.12693/APhysPolA.96.289 PACS numbers: 61.10.-i, 61.80.-x