Structure Changes in Cz-Si Single Crystals Irradiated with Fast Oxygen and Neon Ions
L. Datsenkoa, D. Żymierskab, J. Auleytnerb, D. Klingerb, V. Machulina, V. Klad'koa, V. Melnika, I. Prokopenkoa, T. Czosnykac and J. Choińskic
a Institute for Physics of Semiconductors, National Academy of Sciences of Ukraine, 45, Nauki av., 252 650 Kiev, Ukraine
b Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
c Heavy Ion Laboratory, Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland
Full Text PDF
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 1014 particles/cm2 is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag Kα1, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
DOI: 10.12693/APhysPolA.96.137
PACS numbers: 61.80.Jh, 61.10.-i, 61.72.-y