Effect of Thermal Annealing on Optical Properties of Implanted Gaas |
| M. Kulika, F.F. Komarovb and D. Mączkaa a Institute of Physics, Maria Curie-Skłodowska University, Pl. Marii Curie-Skłodowskiej 1, 20-031 Lublin, Poland b Institute of Physics, State University, Minsk, Republic of Byelorussia |
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| GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×1016 cm-2 indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values. |
| DOI: 10.12693/APhysPolA.96.131 PACS numbers: 07.60.Fs, 61.72.Vv, 78.20.-e |