Positron Annihilation Studies of Czochralski-Grown Silicon Annealed Under Pressure
G.P. Karwasza,b, R.S. Brusaa, A. Misiukc and A. Zeccaa
a Instituto Nazionale per la Fisica della Materia, Universita' di Trento, 38050 Povo, Italy
b Instytut Fizyki, WSP Słupsk, Arciszewskiego 22b, 76-220 Słupsk, Poland
c Instytut Technologii Elektronowej, Al. Lotników 32/46, 02-668 Warszawa, Poland
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Two positron techniques have been applied to study dynamics of oxygen precipitation in Czochralski-grown silicon, annealed under high (up to 1.4 GPa) pressure. Lifetime measurements were performed with 180 ps resolution; Doppler broadening with a variable-energy slow-positron beam. Different thermal treatings rise the mean lifetime of positrons from 222 ps in as-grown samples up to 227 ps. In samples with a high (up to 85%) amount of oxygen precipitated, an intermediate (550-800 ps) lifetime is observed.
DOI: 10.12693/APhysPolA.95.575
PACS numbers: 71.60.+z, 78.70.Bj, 71.55.Cn