Light-Induced Modification of 3D Photonic Band Structure Detected by Means of Photoreflection |
| A.M. Kapitonov, S.M. Kachan, A.N. Ponyavina, S.V. Gaponenko Institute of Molecular and Atomic Physics, National Academy of Science of Belarus, F. Skaryna Ave. 70, Minsk 220072, Belarus V.N. Bogomolov, A.V. Prokofiev Ioffe Physico-Technical Institute, Russian Academy of Science, Politekhnicheskaya St. 26, St.-Petersburg 194021, Russia P. Sitarek and J. Misiewicz Institute of Physics, Wrocław Technical University, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland |
| Received: September 8, 1998; in final form January 11, 1999 |
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| Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given. |
| DOI: 10.12693/APhysPolA.95.335 PACS numbers: 42.70.Qs, 42.70.Gi |