Valence Band Density of States and Mn 3d Contribution in Mn1-xMgxTe
B.J. Kowalski, E. Guziewicz, K. Kopalko, B.A. Orłowski, E. Janik, T. Wojtowicz
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

and R.L. Johnson
Universität Hamburg, II Institut für Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg, Germany
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Resonant photoemission spectroscopy was applied to determine the Mn 3d derived contribution to the valence band density of states of Mn0.44 Mg0.56Te grown by molecular beam epitaxy on a GaAs(001) substrate. The modifications of the valence band density-of-states distribution are discussed as a consequence of the substitution of Mg ions for Mn ions.
DOI: 10.12693/APhysPolA.94.401
PACS numbers: 71.20.Nr, 79.60.-i