A Photoluminescence Study in PbS-EuS Superlattices
L. Kowalczyk, J. Sadowski, R.R. Gałązka
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

A. Stachow-Wójcik
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

A.Yu. Sipatov, V.V. Volobuev
Kharkov State Technical University, Kharkov, Ukraine

V.A. Smirnov
A.F. Ioffe Physical-Technical Institute, St. Petersburg, Russia

and V.K. Dugaev
Institute of Material Science Problems, Ukrainian Academy of Sciences, Chernivtsy, Ukraine
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Investigations of the photoluminescence of PbS-EuS superlattices deposited on (111)BaF2 substrates are presented. Quantum-size and deformation effects in photoluminescence spectra are observed. The strain-induced gap shift and valence-band offset is determined from experimental results. A strong stimulated photoluminescence with relatively low threshold was observed. It was found that the photocarriers generated in EuS barrier strongly affect the population of PbS subbands.
DOI: 10.12693/APhysPolA.94.397
PACS numbers: 75.50.Pp