Bound Exciton Luminescence in Phosphorus Doped Cd1-xMnxTe Crystals

Le Van Khoi, R.R. Gałązka, B. Witkowska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland and Nguyen The Khoi Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

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Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd1-xMnxTe is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A0, X), excitons bound to neutral donors (D0,X), and free excitons (X) at energies E(A0,X)=1.606, E(D0,X)=1.610, and EX=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A0, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.

DOI: 10.12693/APhysPolA.94.392 PACS numbers: 71.55.Eq, 78.47.+p