Resonant Tunnelling in Double-Barrier Heterostructures with an Accumulation Layer |
| T. Wosiński, T. Figielski, A. Mąkosa, S. Wrotek and W. Dobrowolski Institute of Physics, Polish Academy of Sciences and College of Science, Al. Lotników 32/46, 02-668 Warszawa, Poland |
| Full Text PDF |
| Two modes of electron gas injection in resonant tunnelling through GaAs/AlGaAs double-barrier heterostructures were revealed while studying their current-voltage characteristics. Examining peculiarities of the characteristics within the temperature range 4-350 K and under a high magnetic field, we were able to distinguish the contribution to resonant tunnelling of ballistic electrons injected from a three-dimensional electron gas in the emitter contact and that of electrons injected from a two-dimensional electron gas in the accumulation layer formed near the emitter barrier. |
| DOI: 10.12693/APhysPolA.94.617 PACS numbers: 73.40.Gk, 73.50.Jt, 85.30.Mn |