ACTA

Interfacial Microstructure of Ni/Si-Based Ohmic Contacts To GaN

E. Kamińska^a, A. Piotrowska^a, J. Jasiński^b, J. Kozubowski^c, A. Barcz^a, K. Gołaszewska^a, M.D. Bremser^d and R.F. Davis^e
^aInstitute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
^bInstitute of Experimental Physics, Warsaw University, Warsaw, Poland
^cFaculty of Mat. Science and Engineering, Warsaw Technical University, Warsaw, Poland
^dAixtron AG, Aachen, Germany
^eDepartment of Mat. Science and Eng., North Carolina State University, Raleigh, USA

Full Text PDF

The microstructure of Ni/Si-based contacts to GaN has been studied using transmission electron microscopy methods. The transition from non-ohmic to ohmic behavior appears to correlate with the initial limited reaction of GaN with Ni and further Si-Ni reaction-driven decomposition of the interfacial GaN-Ni phase.

DOI: 10.12693/APhysPolA.94.383
Erratum DOI: 10.12693/APhysPolA.94.857
PACS numbers: 73.40.Cg, 73.40.Ns