DLTS Study of Be-Doped p-Type AlGaAs/GaAs MBE Layers |
| J. Szatkowski, E. Płaczek-Popko, K. Sierański Institute of Physics, Technical University of Wrocław, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland and O.P. Hansen Œrsted Laboratory, University of Copenhagen, Universitetparken 5, 2100 Copenhagen, Denmark |
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| Deep-level transient spectroscopy method was applied to study deep hole traps in p-type Al0.5Ga0.5As grown on GaAs semi-insulating substrate by MBE. Five hole traps labelled by us as H0 to H4 were found. For the traps H1, H3 and H4 thermal activation energies obtained from Arrhenius plots were equal to: EH1=0.15 eV, EH3=0.4 eV, and EH4=0.46 eV. Hole emission from the trap H2 was electric field dependent with the thermal activation energy extrapolated to zero-field equal to 0.37 eV. Capture cross-sections for the traps H1 and H4 were thermally activated with energetic barriers 0.04 eV (for H1) and 0.18 eV (for H4). |
| DOI: 10.12693/APhysPolA.94.565 PACS numbers: 71.55.-i, 71.55.Eq |