Optically Active Si:Er Layers Grown by the Sublimation MBE Method |
| M. Stepikhova, A. Andreev, B. Andreev, Z. Krasil'nik, V. Shmagin Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, Nizhny Novgorod, Russia V. Kuznetsov, R. Rubtsova Nizhny Novgorod State University, Gagarin Avn. 23, Nizhny Novgorod, Russia W. Jantsch, H. Ellmer, L. Palmetshofer, H. Preier Institut für Halbleiterphysik, Johannes Kepler Universität, 4040 Linz, Austria Yu. Karpov Institute for Chemical Problems of Microelectronics, Moscow, Russia K. Piplits and H. Hutter Institut für Analytische Chemie, Technische Universität Wien, Vienna, Austria |
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| We report the first application of sublimation molecular beam epitaxy to grow uniformly and selectively doped Si:Er layers with Er concentration up to 5×1018 cm-3. The Hall concentration of electrons is about 10% of total Er contents. The mobility is 300-400 cm2 V-1 s-1 at 300 K. All samples exhibit photoluminescence at 1.537 μm up to 100-140 K. |
| DOI: 10.12693/APhysPolA.94.549 PACS numbers: 81.15.Hi |