Electrical Characterization of Semiconducting Polymers
P. Stallinga, H.L. Gomes
UCEH, Universidade do Algarve, Campus de Gambelas, 8000 Faro, Portugal

G.W. Jones and D.M. Taylor
Inst. of Molecular and Biomol. Electronics, Univ. of Wales, Dean Street, Bangor, Gwynnedd, LL57 1UT, United Kingdom
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Schottky diodes resulting from an intimate contact of aluminum on electrodeposited poly(3-methylthiopene) were studied by admittance spectroscopy, capacitance-voltage measurements and voltaic and optically-induced current and capacitance transients. The loss tangents show the existence of interface states that can be removed by vacuum annealing. Furthermore, the C-V curves contradict the idea of movement of the dopant ions.
DOI: 10.12693/APhysPolA.94.545
PACS numbers: 73.61.Ph, 73.40.-c