Optically Pumped Low Threshold ZnSe Based Lasers with 2.8 ML CdSe Active Region
S. Sorokin, A. Toropov, T. Shubina, A. Lebedev, I. Sedova, S. Ivanov
Ioffe Physico-Technical Institute of Russian Academy of Sciences, Politekhnicheskaya 26, St.-Petersburg 194021, Russia

and A. Waag
Universität Wurzbürg, Physikalisches Institut Am Hubland, 8700 Würzburg, Germany
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Room-temperature optically pumped (Zn,Mg)(S,Se)/(Zn,Cd)Se laser structures have been grown by molecular beam epitaxy. Using of alternatively-strained short-period superlattice waveguide results in low threshold power density values over the whole blue-green (470-520 nm) wavelength range. Incorporation of CdSe fractional monolayer active region provides more than fourfold further decrease in threshold with respect to quantum well laser structure. Optical and structural properties of laser structure with 2.8 monolayer CdSe are discussed in detail.
DOI: 10.12693/APhysPolA.94.539
PACS numbers: 78.66.Hf, 78.45.+h