Evidence for Alloy Splitting of Ge Related DX State in AlxGa1-xAs |
| C. Skierbiszewski, R. Piotrzkowski High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29, 01-142 Warsaw, Poland and K. Lubke Institut für Experimentalphysik, Johannes-Kepler-Universität, 4040 Linz, Austria |
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| Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C3v configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor. |
| DOI: 10.12693/APhysPolA.94.531 PACS numbers: 71.55.-i, 72.20.Fr |