High Resistivity AlGaAs Grown by Low Temperature MBE |
| D. Radomska, J. Ratajczak, K. Regiński and M. Bugajski Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Al0.3Ga0.7As layers were grown by molecular beam epitaxy using substrate temperature 200-300°C, tetrameric As and two values of As/Ga+Al flux ratio i.e. 3 or 8. The post-growth annealing was performed in situ at 600°C for 20 min under As-overpressure. The samples were characterised by reflection high-energy electron diffraction, transmission electron microscope and room-temperature I-V measurements of n+/LT grown layer /n+ resistors. The resistivity and trap-filled limited voltage have been determined. The best layers exhibited ρ of the order of 109 Ω cm, were monocrystalline, uniformly precipitated and without dislocations. |
| DOI: 10.12693/APhysPolA.94.492 PACS numbers: 73.61.Ey |