Deep Level Studies in Zn1-xMgxSe Layers Grown by MBE

S. Płachetko, G. Ząbik, Z. Łukasiak, P. Borowski and W. Bała Institute of Physics, N. Copernicus University, Grudziądzka 5, 87-100 Toruń, Poland

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The deep levels present in semiconducting Zn1-xMgxSe (0 ≤ x ≤ 0.4) were investigated by means of deep level transient spectroscopy, photocapacitance transient and thermally stimulated depolarization. The thermal activation energy levels estimated from the deep level transient spectroscopy measurements are: ET1=0.28 eV and ET2=0.56 eV. For the Zn1-xMgxSe epilayers thermally stimulated depolarization curves consist of four overlapping peaks: 227.4 K, 243.6 K, 265.7 K, and 285.0 K.

DOI: 10.12693/APhysPolA.94.483 PACS numbers: 71.55.Eq, 72.80.Ey