Investigation of Quantum Dot Structures Grown by MOCVD in InAs/GaAs System |
| J. Jasiński, R. Bożek, R. Stępniewski Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland and J. Kozubowski Faculty of Materials Science and Engineering, Warsaw University of Technology, Narbutta 85, 02-524 Warsaw, Poland |
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| Layers of InAs quantum dots grown on [100] GaAs substrates were characterised by photoluminescence and investigated by transmission electron microscopy. Two types of InAs islands were observed in these layers. The islands of the first type had mainly a form of big, elongated pyramids. Most of them were found to be dislocated. On the other hand, the islands of the second type were real self-assembled, coherent quantum dots giving rise to a characteristic photoluminescence band. |
| DOI: 10.12693/APhysPolA.94.369 PACS numbers: 68.55.-a, 61.16.Bg |