Electrical, Magnetic, and Structural Properties of Sn1-xMnxTe Layers Grown by Molecular Beam Epitaxy |
| A.J. Nadolny, J. Sadowski, T. Story, W. Dobrowolski, M. Arciszewska, K. Świątek, J. Kachniarz and J. Adamczewska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland |
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| Layers of Sn1-xMnxTe (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF2 substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn1-xMnxTe layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p77=7×1019 -2×1021 cm-3. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at TC ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 1020 cm-3) and remain paramagnetic in the temperature range studied T=4.5÷70 K. |
| DOI: 10.12693/APhysPolA.94.449 PACS numbers: 75.20.Ck, 75.30.Et, 68.55.-a |