PVT-Grown Single Crystals of Cd1-xZnxTe (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
A. Mycielski, A. Szadkowski, E. Łusakowska, L. Kowalczyk, J. Domagała, J. Bąk-Misiuk, Z. Wilamowski and B. Witkowska
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
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The process of growth of single crystals of Cd1-xZnxTe (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
DOI: 10.12693/APhysPolA.94.441
PACS numbers: 81.05.Dz, 81.10.Bk