Electrical Properties of InGaP Doped with Si

E. Litwin-Staszewska, W. Trzeciakowski, R. Piotrzkowski High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland and L. Gonzalez Instituto de Microelectronica de Madrid, CSIC, 28760 Tres Cantos, Spain

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We measured Hall concentration n in InGaP:Si epitaxial layers grown by MBE as a function of pressure P up to 2 GPa and of temperature T from 77 to 300 K. We interpreted our results in terms of the broad distribution of impurity states resonant with the conduction band. From the low-temperature n(P) dependence we can directly obtain the total density of impurity states around the Fermi level ρ(EF). The Fermi level can be shifted with respect to impurity states by applying pressure and by using samples with different n. In this way we obtain ρ(E) in a wide energy range. We discuss the possible reasons for the observed broad distribution of ρ(E).

DOI: 10.12693/APhysPolA.94.431 PACS numbers: 72.20.Fr, 72.80.Ey, 71.55.Eq