Polarity Related Problems in Growth of GaN Homoepitaxial Layers |
| M. Leszczyński, P. Prystawko, A. Śliwinski, T. Suski, E. Litwin-Staszewska, S. Porowski High Pressure Research Center, Sokołowska 29/37, 01-142 Warsaw, Poland R. Paszkiewicz, M. Tłaczała Institute of Electronics Technology, Wrocław Technical University, Janiszewskiego 11/17, 50-372 Wrocław, Poland B. Beaumont, P. Gibart CRHEA-CNRS, Sophia Antipolis, 06960-Valbonne, France A. Barski, R. Langer Commissariat à l'Energie Atomique/Departement de Recherche Fondamentale sur la Matière Condensée, 38054 Grenoble, Cedex, France W. Knap and E. Frayssinet Université de Montpellier II, Groupe d'Etudes des Semiconducteurs, Place E. Bataillon, 34095 Montpellier, France |
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| Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped. |
| DOI: 10.12693/APhysPolA.94.427 PACS numbers: 61.72.Vv, 65.70.+y |