Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction |
| A.M. Kreshchuk, S.V. Novikov, I.G. Savel'ev, T.A. Polyanskaya Ioffe Physico-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg, Russia B. Pődör Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary G. Reményi CNRS Centre de Recherche sur les Très Basses Températures and CNRS/Max-Planck-Institute High Magnetic Field Laboratory, Grenoble, France and Gy. Kovács Applied Physics Research Group, Department of General Physics, Eötvös Loránd University, Budapest, Hungary |
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| The energy relaxation in two-dimensional electron gas in In0.53Ga0.47As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h14=(1.1±0.1)×107 V/cm. Available data for the piezoelectric constant of InxGa1-xAs are discussed in the light of the results of this work. |
| DOI: 10.12693/APhysPolA.94.415 PACS numbers: 72.20.-i |