High Field Magnetization of Sn1-xGdxTe |
| M. Górskaa,b, J.R. Andersonb, C. Woltersc, A. Łusakowskia, T. Storya and Z. Gołackia aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland bDepartment of Physics, University of Maryland, College Park, MD 20742, USA cNational High Magnetic Field Laboratory, Florida State University, Tallahassee FL 32306-4005, USA |
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| The magnetization of p-type Sn1-xGdxTe with x up to 0.045 and the hole concentration, p, varying from 2.7 to 8.3×1020 cm-3 has been measured in magnetic fields up to 27 T, at the temperatures 4.2 and 1.3 K. The data were fitted to a magnetization equation with single-ion and pair terms. From comparison of the exchange parameters determined from the high-field magnetization with those previously obtained from the high-temperature magnetic susceptibility it was found that in samples with p>5×1020 cm-3 the exchange was of a short-range type, while in samples with a lower carrier concentration the long-range exchange mechanism was observed. |
| DOI: 10.12693/APhysPolA.94.347 PACS numbers: 75.20.Ck, 75.30.Et |