Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN |
| E.M. Goldys a, M. Godlewskib and T.L. Tansleya aSemicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, 2109 NSW, Australia bInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland |
| Full Text PDF |
| Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film. |
| DOI: 10.12693/APhysPolA.94.331 PACS numbers: 68.55.-a, 81.15.Gh, 61.16.Ch, 78.30.-j |