Epitaxial Growths of II-VI Compounds on (110) Substrates
G. Cywiński, T. Wojtowicz, K. Kopalko, G. Karczewski and J. Kossut
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
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We studied epitaxial growth conditions of II-VI semiconductors on (110) substrates, which is indispensable for fabrication of T-shaped quantum wire structures. We experimented with different types of (110)-oriented substrates and monitored the surface quality of deposited layers in situ by reflection high energy electron diffraction and ex situ by photoluminescence. The aim of this work is to find optimum growth conditions of II-VI compounds on a cleaved edge of a superlattice as required by the overgrowth method.
DOI: 10.12693/APhysPolA.94.281
PACS numbers: 68.55.-a