Fermi-Edge Singularity in Luminescence Spectra of P-Type Modulation Doped AlGaAs/GaAs Quantum Wells |
| M. Bugajskia, M. Godlewskib, K. Regińskia, P.O. Holtzc, J.P. Bergmanc and B. Monemarc aInstitute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland bInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland cDepartment of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden |
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| We have studied an enhancement of the oscillator strength for optical transitions near the Fermi energy in p-type modulation-doped quantum wells, which, so far, deserved much less attention than analogous n-type systems, because of the complicated valence band structure involved. The relatively wide (L=150 Å) quantum wells and high doping levels were used, containing more than one occupied subband. The enhancement in the photoluminescence intensity at the Fermi energy resulted from the strong correlation and multiple scattering of holes near the Fermi edge by the localized electrons. |
| DOI: 10.12693/APhysPolA.94.265 PACS numbers: 42.55.Px, 73.20.Dx |