Optical Properties and Microstructure of InGaN Grown by Molecular Beam Epitaxy |
| T. Böttcher, S. Einfeldt, S. Figge, V. Kirchner, D. Hommel Institute of Solid State Physics, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany H. Selke, P.L. Ryder Institute of Materials Physics and Structural Research, University of Bremen, P.O. Box 330 440, 28334 Bremen, Germany F. Bertram, T. Riemann, J. Christen Institute of Experimental Physics, University of Magdeburg, P.O. Box 4120, 39016 Magdeburg, Germany U. Lunz and C.R. Becker Institute of Experimental Physics III, University of Würzburg, Am Hubland 3, 97074 Würzburg, Germany |
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| The luminescence of InxGa1-xN is studied for thick epitaxial layers and quantum wells. Using spatially resolved cathodoluminescence spectroscopy the commonly observed broad integral photoluminescence spectra were found to result from spectral and lateral inhomogeneous emission across the samples. Moreover, the integral photoluminescence and absorption spectra show different temperature dependences. The effects can be explained assuming fluctuations of the composition associated with a variation of the band gap. |
| DOI: 10.12693/APhysPolA.94.260 PACS numbers: 68.35.Dv, 68.65.+g, 78.20.-e, 78.55.-m, 78.55.Cr |