Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials |
| L.V. Borkovskaya, B.R. Dzhymaev, N.E. Korsunskaya, I.V. Markevich, A.F. Singaevsky and M.K. Sheinkman Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauki 45, Kiev, 252028, Ukraine |
| Full Text PDF |
| A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics. |
| DOI: 10.12693/APhysPolA.94.255 PACS numbers: 71.55.Jv, 78.55.Et |