Capacitance Spectroscopy of Single-Barrier GaAs/AlAs/GaAS Structures Containing InAs Quantum Dots |
| A.E. Belyaev Institute of Semiconductor Physics, NASD, Kiev 252028, Ukraine L. Eaves, P.C. Main, A. Polimeni, S.T. Stoddart and M. Henini Department of Physics, University of Nottingham, Nottingham, NG7 2RD, U.K. |
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| An electrostatic profile of single-barrier heterostructures with InAs quantum dots encased into barrier has been studied. The role of growth conditions and structure's design is investigated. The charging state and position of energy levels for InAs quantum dots embedded in AlAs matrix are discussed. |
| DOI: 10.12693/APhysPolA.94.245 PACS numbers: 73.40.Gk, 85.30.Mn |