Anomalous Magnetoresistance in Multi-Level Quantum Wells
N.S. Averkiev, L.E. Golub and G.E. Pikus
A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia
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Effect of intensive interlevel transitions in quantum well and strong spin-orbit interaction on weak localization is considered. Anomalous magnetoresistance in classically weak fields is calculated for p-type quantum wells based on A3B5 semiconductors. It is shown that the sign of magnetoresistance changes with varying doping level and the role of the intersubband transitions in weak localization effects depends dramatically on a view of the scattering potential.
DOI: 10.12693/APhysPolA.94.229
PACS numbers: 71.55.Eq, 71.70.Ej, 73.20.Fz