Tunneling Magnetoresistance in Ferromagnetic Junctions: Bias Dependence
J. Barnaƛ, S.F. Lee, P. Holody, L.F. Schelp, F. Petroff and A. Fert
Unite Mixte de Physique CNRS/Thomson, Domaine de Corbeville, 91 404 Orsay, France
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Electron tunneling between two ferromagnetic electrodes across an insulating barrier is analysed theoretically and experimentally. The barrier is either uniform or it includes a layer of small magnetic metallic particles. Particular attention is paid to the origin of the tunneling magnetoresistance and its bias dependence, as well as to the effects due to Coulomb blockade.
DOI: 10.12693/APhysPolA.93.387
PACS numbers: 73.40.Gk, 73.40.Rw, 75.70.-i