Some Applications of Ballistic Electron Emission Microscopy/Spectroscopy
J. Walachov√°
Institute of Radio Engineering and Electronics, Chabersk√° 57, 182 51 Praha 8, Czech Republic
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A brief review of ballistic electron emission microscopy and spectroscopy applications is presented. Results of our ballistic electron emission spectroscopy measurements on cleaved n-GaAs are given. The threshold in ballistic current-voltage characteristic is observed at bias 1.93 V which is high above the expected threshold. Explanation of this effect is given in the frame of present theoretical results.
DOI: 10.12693/APhysPolA.93.365
PACS numbers: 73.20.Dx, 73.30.+y, 73.20.At