ACTA

Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

Z.R. Żytkiewicz^a,b, L. Dobaczewski^b, D. Gomez^a and F. Briones^a
^aInstituto de Microelectronica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
^bInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

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We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decrease in the photoluminescence intensity of the GaAs surface treated by (NH₄)₂S_x solution. The results are discussed in terms of a photoinduced process of the As_Ga antisite generation on the sulfurized surface of GaAs.

DOI: 10.12693/APhysPolA.92.1083
PACS numbers: 68.35.Dv, 68.45.Da