Infrared Luminescence in Er and Er+O Implanted 6H SiC |
| A. Kozanecki Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland W. Jantsch, W. Heis, G. Prechtl Johannes Kepler Universität, 4040, Linz, Austria B.J. Sealy and C. Jeynes Surrey Centre for Research in Ion Beam Applications, University of Surrey, Guildford, Surrey, GU2 5XH, UK |
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| Photoluminescence in the neighbourhood of 1.54 μm due to the 4I13/2-4I15/2 intra-4f-shell transitions of Er3+ ions in 6H SiC is studied. Effects of oxygen coimplantation is also investigated. No difference in the photoluminescence spectra of Er only and Er+O implanted SiC was found. It is concluded that the emission around 1.54 μm in SiC:Er originates from erbium-oxygen complexes, which are formed as a result of thermal annealing. |
| DOI: 10.12693/APhysPolA.92.879 PACS numbers: 61.72.Ww, 71.55.-i, 78.55.-m |