Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers
M. Wojdak, J.M. Baranowski, B. Suchanek, K. Pakuła
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warszawa, Poland

J. Jun and T. Suski
High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland
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In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×1017 cm-3 and mobility 16 cm2/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
DOI: 10.12693/APhysPolA.92.1059
PACS numbers: 78.66.Fd, 78.55.Cr, 73.61.Ey