Transition Metal Impurities and Electronic Structure of ZnSe-Based Isovalent Semiconductor Alloys
T.P. Surkovaa, W. Giriatb, M. Godlewskic and S. Permogorovd
aInstitute of Metal Physics, Ural Division of Russian Academy of Sciences, 620219 Ekaterinburg GSP-170, Russia
bIVIC, Centro de Fisica, Apto 1827, Caracas 1010A, Venezuela
cInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland
dA.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
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Energy level positions of the nickel 2+/1+ and cobalt 2+/3+ charge states have been used to estimate band edges for the valence and conduction bands of ZnSe-based alloys with cation (ZnCdSe) and anion (ZnSSe) substitution. Chemical trends in band offsets of heterostructures of Zn- or Mn-based II-VI compounds are analysed. Further on, the change of Ni2+(3d8) and Co2+(3d7) intra-d shell transition bands upon the alloying of host material is discussed.
DOI: 10.12693/APhysPolA.92.1009
PACS numbers: 71.55.Gs, 78.20.Wc