Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition |
B. Suchaneka, M. Palczewskab, K. Pakułaa, J. Baranowskia and M. Kamińskaa aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland bInstitute of Technology of Electronic Materials, Wólczyńska 133, 01-919 Warsaw, Poland |
Full Text PDF |
Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×1017 cm-1 and mobility up to 500 cm2/(V s) were achieved whereas hole concentration up to 7×1017 cm-3 and mobility about 16 cm2/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g⊥=1.9487 and g∥=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed. |
DOI: 10.12693/APhysPolA.92.1001 PACS numbers: 72.80.Ey, 73.61.Ey |