Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

B. Suchaneka, M. Palczewskab, K. Pakułaa, J. Baranowskia and M. Kamińskaa aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland bInstitute of Technology of Electronic Materials, Wólczyńska 133, 01-919 Warsaw, Poland

Full Text PDF

Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×1017 cm-1 and mobility up to 500 cm2/(V s) were achieved whereas hole concentration up to 7×1017 cm-3 and mobility about 16 cm2/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g⊥=1.9487 and g∥=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.

DOI: 10.12693/APhysPolA.92.1001 PACS numbers: 72.80.Ey, 73.61.Ey