Study of DI-Hydrogen-Monovacancy Defect in Silicon |
| P. Stallinga and B.B. Nielsen Institut for Fysik og Astronomi, Århus University Ny Munkegade, bygning 520, 8000 Århus-C, Denmark |
| Full Text PDF |
| A careful analysis of the alleged electron paramagnetic resonance spectrum of VH2 in silicon is made. The parameters of this spectrum coincide with those of the well-known excited state (S=1) spectrum of the oxygen vacancy defect. The conclusion is reached that they are one and the same. |
| DOI: 10.12693/APhysPolA.92.989 PACS numbers: 76.30.-v, 76.30.Lh, 76.70.Hb |