Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
J. Sadowskia,b, E. Grodzickaa, E. Dynowskaa, J. Adamczewskaa, J. Domagałaa and W. Przedpelskia
aInstitute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland
bInstitute of Vacuum Technology, Długa 44/50, 00-241 Warsaw, Poland
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We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF2(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×1019 cm-3 to 102 1 cm-3 depending on the MBE process parameters.
DOI: 10.12693/APhysPolA.92.967
PACS numbers: 81.15.Gh, 61.14.Hg