Exciton States in Type-II ZnSe/BeTe Quantum Wells |
| A.V. Platonova, D.R. Yakovleva,b, U. Zehnderb, V.P. Kochereshkoa, W. Ossaub, F. Fischerb, Th. Litzb, A. Waagb and G. Landwehrb aA.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia bPhysikalisches Institut der Universität Würzburg, 97074 Würzburg, Germany |
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| We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction. |
| DOI: 10.12693/APhysPolA.92.953 PACS numbers: 78.66.Hf, 78.20.Ls |