Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
J. Łusakowski, K. Karpierz, M. Grynberg
Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

G. Karczewski, T. Wojtowicz
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

S. Contreras and O. Callen
Groupe d'Etude des Semiconducteurs, Université Montpellier II, Pl. E. Bataillon, Montpellier, France
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An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
DOI: 10.12693/APhysPolA.92.911
PACS numbers: 73.61.Ga, 73.50.Jt