Growth and Electrical Properties of Phosphorus Doped Zn1-xMnxTe Crystals
Le Van Khoi, J. Jaroszyński, B. Witkowska, A. Mycielski, R.R. Gałązka
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

and J. Cisowski
Department of Solid State Physics, Polish Academy of Science Wandy 3, 41-800 Zabrze, Poland
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The high pressure Bridgman technique was used to grow Zn1-xMnxTe:P crystals. Under the N2 pressure of 30 atm., we obtained the p+-Zn1-xMnxTe single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×1018 cm-3 and the room temperature conductivity σ(RT) ≈ 30 Ω-1cm-1. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn1-xMnxTe:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 103) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
DOI: 10.12693/APhysPolA.92.833
PACS numbers: 71.30.+h, 71.55.Jv, 72.80.Ga