Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface
T. Lundström, J.P. Bergman, P.O. Holtz, B. Monemar
Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

K. Campman, J.L. Merz and A.C. Gossard
QUEST Center, University of California at Santa Barbara, Santa Barbara, CA 93106, USA
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We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al0.35Ga0.65As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.
DOI: 10.12693/APhysPolA.92.824
PACS numbers: 78.66.-w, 78.60.-b