Ohmic Contacts To GaN by Solid-Phase Regrowth

E. Kamińska, A. Piotrowska, A. Barcz, L. Ilka, M. Guziewicz, S. Kasjaniuk Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland E. Dynowska Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland S. Kwiatkowski Soltan Institute for Nuclear Studies, Hoża 69, 00-681 Warszawa, Poland M.D. Bremser and R.F. Davis Materials Science and Engineering, North Carolina State University, NC 27695-7907, USA

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Ni/Si-based contact schemes based on the solid-phase regrowth process have been developed to form low-resistance ohmic contacts to GaN with a minimum contact resistivity of 1×10-3 Ωcm2 and ≈1×10-2 Ωcm2 to GaN:Si (n ≈ 2×1017 cm-3) and GaN:Mg (p ≈ 3×1017 cm-3). The solid-phase regrowth process responsible for the ohmic contact formation was studied using X-ray diffraction, secondary ion mass spectrometry and Rutherford backscattering spectrometry.

DOI: 10.12693/APhysPolA.92.819 PACS numbers: 73.40.Cg, 73.40.Ns