Photoluminescence Studies of Cubic Phase GaN Grown by Molecular Beam Epitaxy on (001) Silicon Covered with Sic Layer
M. Godlewski, V.Yu. Ivanov
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

J.P. Bergman, B. Monemar
Dept. Phys. and Meas. Technology, Linköping University, 581 83 Linköping, Sweden

A. Barski and R. Langer
CEA/Grenoble, DRFMC/SP2M, 17 r. des Martyrs, 38054 Grenoble, France
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In this work we evaluate optical properties of cubic phase GaN epilayers grown on top of (001) silicon substrate prepared by a new process. Prior to the growth Si substrate was annealed at 1300-1400°C in propane. The so-prepared substrate is covered with a thin (≈ 4 nm) SiC wafer, which allowed a successful growth of good morphological quality cubic phase GaN epilayers. The present results confirm recent suggestion on smaller ionization energies of acceptors in cubic phase GaN epilayers.
DOI: 10.12693/APhysPolA.92.777
PACS numbers: 71.55.Eq, 78.47.+p