Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy
M. Godlewski, T. Wojtowicz, G. Karczewski, J. Kossut
Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw, Poland

J.P. Bergman and B. Monemar
Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden
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An influence of doping level on exciton properties in n-doped multiple quantum well structures of CdTe/CdMnTe is studied for multiple quantum well structures prepared in the way that donor (indium) concentration changes within the length of the sample. We show that the formation scenario for neutral donor bound excitons in low-dimensional structures can be different from that observed in bulk samples. We further show that in the case of such quantum well structures we can selectively excite either photoluminescence emission of localized or donor bound excitons, which is a consequence of surprisingly weak energy transfer link between two types of excitonic transitions.
DOI: 10.12693/APhysPolA.92.757
PACS numbers: 78.47.+p, 78.55.Et