Transport Properties of Silicon δ-Doped Gaas in High Electron Density Regime |
| A.V. Buyanov, P.O. Holtz, G. Pozina, B. Monemar Department of Physics and Measurements Technology, Linköping University, 581 83, Linköping, Sweden J. Thordson and T.G. Andersson Department of Physics, Chalmers University of Technology and Goteborg University 412 96, Goteborg, Sweden |
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| We report results for Si layers embedded in GaAs, extending from the delta-doped (δ-doped) range up to 6 monolayers derived by means of variable temperature resistivity and Hall effect measurements, secondary ion mass spectrometry and high resolution X-ray diffractometry techniques. The conductivity transition from free carrier transport in ordered δ-layers (<1 ML) to strongly-localized two-dimensional variable range hopping transport under potential fluctuation disordered conditions (>4 ML) is clearly observed. This observation is in good agreement with the secondary ion mass spectrometry and high resolution X-ray diffractometry data. Results from the intermediate case with 2-3 MLs are also discussed. |
| DOI: 10.12693/APhysPolA.92.727 PACS numbers: 61.72.Vv, 68.55.Ln, 72.60.+g |